A 12-Channel Parallel 40Gb/s 0.35μm SiGe BiCMOS Laser Diode Driver

2009 Symposium on Photonics and Optoelectronics Pub Date : 2009-09-01 DOI:10.1109/SOPO.2009.5230181

Feng Xie, Zhiqun Li, Zhigong Wang

引用次数: 0

Abstract

Abstract—This paper presents a 12-channel parallel 40Gb/s laser diode driver (LDD) realized in 0.35μm SiGe BiCMOS technology. The single channel works at bite rate of 3.318Gb/s. A “cross couple” capacitance cancel technique is used to increase bandwidth. To avoid substrate coupling noise brought by the adjacent channel, an isolation method for parallel amplifier is used. The measured results show the LDD can supply 5-20mA modulation current and 2-5mA bias current.

查看原文本刊更多论文

一个12通道并行40Gb/s 0.35μm SiGe BiCMOS激光二极管驱动器

摘要:提出了一种采用0.35μm SiGe BiCMOS技术实现的12通道并行40Gb/s激光二极管驱动器(LDD)。单通道的比特率为3.318Gb/s。采用“交叉耦合”电容抵消技术来增加带宽。为了避免相邻通道带来的衬底耦合噪声，采用了并联放大器隔离的方法。测量结果表明，LDD可提供5-20mA调制电流和2-5mA偏置电流。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2009 Symposium on Photonics and Optoelectronics

自引率

0.00%

发文量