Finite-size and edge effects on the quantum capacitance of graphene nanoribbon field-effect transistors

Abstract

A fully analytical model for the quantum capacitance of AGNR-FETs is proposed in order to explore several finite-size and edge effects. It is demonstrated that, the quantum capacitance of sub-10 nm AGNRs versus channel potential, has a non-monotonic behavior with peak values and corresponding channel potentials which are strongly dependent on the ribbon's width and edge effects.