Fabrication of nanostructured silicon nitride thin film gas sensors by reactive direct current magnetron sputtering

IF 4.2 Q2 NANOSCIENCE & NANOTECHNOLOGY
F. J. Kadhim, A. Anber
{"title":"Fabrication of nanostructured silicon nitride thin film gas sensors by reactive direct current magnetron sputtering","authors":"F. J. Kadhim, A. Anber","doi":"10.1177/2397791417731025","DOIUrl":null,"url":null,"abstract":"In this work, high-quality nanostructured silicon nitride films were prepared by reactive direct current magnetron sputtering technique. The properties of the prepared structures were determined by the ratios of gases (argon and nitrogen) in the discharge gas mixture. This parameter was effectively seen important to control the structural characteristics of the prepared nanostructures, especially surface roughness and particle size. The prepared nanostructures were successfully tested for gas-sensing applications and they exhibited reasonably high sensitivity for their resistance changes to gas concentration with increasing temperature (up to 96% at 350 °C). This work can be good attempt to use silicon nitride nanostructures in such important application.","PeriodicalId":44789,"journal":{"name":"Proceedings of the Institution of Mechanical Engineers Part N-Journal of Nanomaterials Nanoengineering and Nanosystems","volume":null,"pages":null},"PeriodicalIF":4.2000,"publicationDate":"2017-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the Institution of Mechanical Engineers Part N-Journal of Nanomaterials Nanoengineering and Nanosystems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1177/2397791417731025","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"NANOSCIENCE & NANOTECHNOLOGY","Score":null,"Total":0}
引用次数: 2

Abstract

In this work, high-quality nanostructured silicon nitride films were prepared by reactive direct current magnetron sputtering technique. The properties of the prepared structures were determined by the ratios of gases (argon and nitrogen) in the discharge gas mixture. This parameter was effectively seen important to control the structural characteristics of the prepared nanostructures, especially surface roughness and particle size. The prepared nanostructures were successfully tested for gas-sensing applications and they exhibited reasonably high sensitivity for their resistance changes to gas concentration with increasing temperature (up to 96% at 350 °C). This work can be good attempt to use silicon nitride nanostructures in such important application.
反应直流磁控溅射制备纳米结构氮化硅薄膜气体传感器
本文采用反应直流磁控溅射技术制备了高质量的纳米氮化硅薄膜。所制备的结构的性能由放电气体混合物中气体(氩气和氮气)的比例决定。该参数对于控制所制备纳米结构的结构特性,特别是表面粗糙度和粒径具有重要意义。制备的纳米结构成功地进行了气敏应用测试,它们对气体浓度随温度升高的电阻变化表现出相当高的灵敏度(在350°C时高达96%)。本工作可以很好地尝试利用氮化硅在纳米结构上的重要应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
CiteScore
6.00
自引率
1.70%
发文量
24
期刊介绍: Proceedings of the Institution of Mechanical Engineers Part N-Journal of Nanomaterials Nanoengineering and Nanosystems is a peer-reviewed scientific journal published since 2004 by SAGE Publications on behalf of the Institution of Mechanical Engineers. The journal focuses on research in the field of nanoengineering, nanoscience and nanotechnology and aims to publish high quality academic papers in this field. In addition, the journal is indexed in several reputable academic databases and abstracting services, including Scopus, Compendex, and CSA's Advanced Polymers Abstracts, Composites Industry Abstracts, and Earthquake Engineering Abstracts.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信