Circuit-level Design and Evaluation of STT-MRAM based Binary Winner-Takes-All Network for Image Recognition

C. Wang, D. Zhang, Y. Hou, L. Zeng, Jacques-Olivier Klein, W. Zhao
{"title":"Circuit-level Design and Evaluation of STT-MRAM based Binary Winner-Takes-All Network for Image Recognition","authors":"C. Wang, D. Zhang, Y. Hou, L. Zeng, Jacques-Olivier Klein, W. Zhao","doi":"10.1109/INTMAG.2018.8508744","DOIUrl":null,"url":null,"abstract":"Recently it has been demonstrated that binary neural network (BNNs) can achieve satisfying accuracy on various databases with the significant reduction of computation and memory resources [1], which provides a promising way for on-chip implementation of deep neural networks (DNNs). To storage synaptic weights, the SRAM is traditionally utilized in the CMOS based ASIC designs for hardware acceleration implementation of DNNs. However, it has been proved to be extremely area- and power-inefficiency due to its large cell area $( >200 \\mathrm {F}^{2})$and volatility, respectively. To overcome these issues, the emerging non-volatile spin transfer torque magnetoresistive RAM (STT-MRAM) with small cell area $(< 10 \\mathrm {F}^{2})$recently has been proposed to implement synaptic weights instead of SRAM [2]. Moreover, STT-MRAM has been demonstrated at Gb chip-level by industry [3]. In this paper, a single-layer binary perceptron (BP) is proposed for image recognition, which can be implemented via the pseudo-crossbar array of 1T-1MTJ (STT-MRAM cell) as shown in Fig. 1(a). With the learning rule in [1], such BP was trained in an off-line manner on a set of $\\mathrm {N}=30$patterns, including three stylized letters (‘z’, ‘v’, ‘n’) as shown in Fig. 1(b) [4], which also was used for testing. To classify these three stylized letters, we design a winnertakes-all (WTA) circuit as shown in Fig. 1(c), which is used as the peripheral inference circuit of proposed BP. Based on a physics-based STT-MTJ compact model and a commercial CMOS 40 nm design kit, the functionality of the proposed BP and WTA circuit have been demonstrated as shown in Fig. 2(a). Additionally, we also investigate the impact of TMR and device variations on the recognition rate as shown in Fig. 2(b)and Fig. 2(c), respectively. In summary, a STT-MRAM based binary synaptic array with a WTA circuit has been proposed for image recognition, which provides a promising solution for hardware implementation of BNNs on-chip.","PeriodicalId":6571,"journal":{"name":"2018 IEEE International Magnetic Conference (INTERMAG)","volume":"94 1","pages":"1-1"},"PeriodicalIF":0.0000,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Magnetic Conference (INTERMAG)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INTMAG.2018.8508744","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

Recently it has been demonstrated that binary neural network (BNNs) can achieve satisfying accuracy on various databases with the significant reduction of computation and memory resources [1], which provides a promising way for on-chip implementation of deep neural networks (DNNs). To storage synaptic weights, the SRAM is traditionally utilized in the CMOS based ASIC designs for hardware acceleration implementation of DNNs. However, it has been proved to be extremely area- and power-inefficiency due to its large cell area $( >200 \mathrm {F}^{2})$and volatility, respectively. To overcome these issues, the emerging non-volatile spin transfer torque magnetoresistive RAM (STT-MRAM) with small cell area $(< 10 \mathrm {F}^{2})$recently has been proposed to implement synaptic weights instead of SRAM [2]. Moreover, STT-MRAM has been demonstrated at Gb chip-level by industry [3]. In this paper, a single-layer binary perceptron (BP) is proposed for image recognition, which can be implemented via the pseudo-crossbar array of 1T-1MTJ (STT-MRAM cell) as shown in Fig. 1(a). With the learning rule in [1], such BP was trained in an off-line manner on a set of $\mathrm {N}=30$patterns, including three stylized letters (‘z’, ‘v’, ‘n’) as shown in Fig. 1(b) [4], which also was used for testing. To classify these three stylized letters, we design a winnertakes-all (WTA) circuit as shown in Fig. 1(c), which is used as the peripheral inference circuit of proposed BP. Based on a physics-based STT-MTJ compact model and a commercial CMOS 40 nm design kit, the functionality of the proposed BP and WTA circuit have been demonstrated as shown in Fig. 2(a). Additionally, we also investigate the impact of TMR and device variations on the recognition rate as shown in Fig. 2(b)and Fig. 2(c), respectively. In summary, a STT-MRAM based binary synaptic array with a WTA circuit has been proposed for image recognition, which provides a promising solution for hardware implementation of BNNs on-chip.
基于STT-MRAM的二元赢者通吃网络图像识别的电路级设计与评价
近年来,二元神经网络(bnn)在各种数据库上都能达到令人满意的精度,大大减少了计算量和内存资源,这为深度神经网络(dnn)的片上实现提供了一种很有前景的方法。为了存储突触权值,SRAM传统上用于基于CMOS的深度神经网络硬件加速实现的ASIC设计。然而,由于其较大的单元面积$(>200 \ mathm {F}^{2})$和波动性,已被证明是极低的面积和功率效率。为了克服这些问题,最近提出了具有小单元面积$(< 10 \ mathm {F}^{2})$的非易失性自旋转移转矩磁阻RAM (STT-MRAM)来实现突触权重而不是SRAM[2]。此外,STT-MRAM已经在Gb级芯片上得到了行业验证。本文提出了一种用于图像识别的单层二元感知器(BP),该感知器可以通过1T-1MTJ (STT-MRAM cell)的伪横杆阵列实现,如图1(a)所示。利用[1]中的学习规则,该BP在一组$\ mathm {N}=30$模式上离线训练,包括图1(b)[4]所示的三个风格化字母(' z ', ' v ', ' N '),[4]也用于测试。为了对这三个程式化的字母进行分类,我们设计了如图1(c)所示的赢家通吃(WTA)电路,该电路用作提议BP的外围推理电路。基于基于物理的STT-MTJ紧凑型模型和商用CMOS 40 nm设计套件,所提出的BP和WTA电路的功能如图2(a)所示。此外,我们还研究了TMR和设备变化对识别率的影响,分别如图2(b)和图2(c)所示。综上所述,本文提出了一种基于STT-MRAM的带WTA电路的二进制突触阵列用于图像识别,为片上bnn的硬件实现提供了一种很有前景的解决方案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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