Improved graphene-base heterojunction transistor with different collector semiconductors for high-frequency applications

Abstract

The graphene-base heterojunction transistor GBHT is an attractive device concept to reach THz operation frequencies. The novel transistor consists of two n-doped silicon layers with a graphene monolayer in between. Here we demonstrate improved device performance with current saturation in the transistor’s output characteristics. A clear modulation of the collector current by the applied graphene base voltage can be observed.