Preparation and properties of CuInSe/sub 2/ solar cells with a ZnSe intermediate layer

Abstract

CuInSe/sub 2/-based solar cells were prepared by thermal evaporation using CdS and In/sub 2/O/sub 3/ as window layers, with a thin ZnSe layer between the window layer and the CuInSe/sub 2/. The effects of ZnSe with thicknesses between 200 AA and 2000 AA and ZnSe deposition temperatures between 100 degrees C and 200 degrees C were investigated. For the CdS:In/CdS/ZnSe/CuInSe/sub 2/ cells, as the ZnSe thickness increases, J/sub 0/ decreases and/or the diode factor A increases. For the In/sub 2/O/sub 3//ZnSe/CuInSe/sub 2/ cells the change of J/sub 0/ is much less and there is an increase in the diode factor for increasing ZnSe thickness. Under illumination, the V/sub oc/ of the cell is the same with and without ZnSe and the cells with ZnSe layers thicker than 400 AA show strong photosuppression.<>