Theoretical Study of a Thermophysical Property of Molten Semiconductors

Abstract

This paper deals with theoretical approach to surface tension of molten silicon and germanium, and contributes to this field, which is very important. A theoretical calculation for determining the surface tension of high-temperature semiconductor melts, such as molten silicon and germanium, in the temperature range 1687–1825 K and 1211–1400 K, respectively, is described. The calculated temperature-dependence surface tension data for both Si and Ge are expressed as 𝛾=876−0.32(𝑇−𝑇𝑚) and 𝛾=571−0.074(𝑇−𝑇𝑚) (mJ m−2), respectively. These values are in consistence with the reported experimental data (720–875 for Si and 560–632 mJ m−2 for Ge). The calculated surface tension for both elements decreases linearly with temperature.