A 58.4mW solid-state power amplifier at 220 GHz using InP HBTs

2012 IEEE/MTT-S International Microwave Symposium Digest Pub Date : 2012-06-17 DOI:10.1109/MWSYM.2012.6259659

T. Reed, M. Rodwell, Z. Griffith, P. Rowell, M. Field, M. Urteaga

引用次数: 14

Abstract

A 220 GHz solid state power amplifier MMIC is presented demonstrating 58.4 mW of output power with 5.4dB compressed gain. The 8-cell amplifier has a small signal gain of 8.9 dB at 220 GHz, and 3-dB bandwidth from 206 to 242GHz. Amplifier cells are formed using a 250nm InP HBT technology and a 5um BCB thin-film, non-inverted microstrip wiring environment. Power division and combining of the eight amplifier cells is done by a 2-1 quarter wave combiner series connected to a 4-1 Dolph-Chebyshev combiner. More than 50mW of output power was observed from 215 to 225GHz.

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采用InP hbt的220 GHz 58.4mW固态功率放大器

提出了一种220 GHz固态功率放大器MMIC，其输出功率为58.4 mW，压缩增益为5.4dB。8单元放大器在220 GHz时具有8.9 dB的小信号增益，在206至242GHz范围内具有3 dB的带宽。放大器单元采用250nm InP HBT技术和5um BCB薄膜，非倒置微带布线环境形成。8个放大器单元的功率划分和组合由连接到4-1 dolphi - chebyshev合成器的2-1四分之一波合成器系列完成。在215至225GHz范围内观察到超过50mW的输出功率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2012 IEEE/MTT-S International Microwave Symposium Digest

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