{"title":"Design, technology and yield in the post-moore era","authors":"G. Yeric","doi":"10.1109/TEST.2014.7035310","DOIUrl":null,"url":null,"abstract":"Looking forward along the technology roadmap, we see a complex, shifting landscape in which to attempt to ramp yield. Optical lithography is not providing any direct scaling benefit, and the available workarounds such as multiple patterning and mix-and-match lithography techniques greatly complicate design-technology co-optimization (DTCO) and yield/cost understanding. The silicon FinFET will give way to nanowires and/or new channel materials, and eventually force the examination of entirely new transistor topologies. Interconnect R's and C's will upset the FET/wire balance and with it some of our accumulated design/yield understanding, and reliability will play an increasing role in the determination of final cost. This talk will examine these technology roadmap topics with a view toward technology bring-up.","PeriodicalId":6403,"journal":{"name":"2007 IEEE International Test Conference","volume":"81 1","pages":"1"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE International Test Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TEST.2014.7035310","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Looking forward along the technology roadmap, we see a complex, shifting landscape in which to attempt to ramp yield. Optical lithography is not providing any direct scaling benefit, and the available workarounds such as multiple patterning and mix-and-match lithography techniques greatly complicate design-technology co-optimization (DTCO) and yield/cost understanding. The silicon FinFET will give way to nanowires and/or new channel materials, and eventually force the examination of entirely new transistor topologies. Interconnect R's and C's will upset the FET/wire balance and with it some of our accumulated design/yield understanding, and reliability will play an increasing role in the determination of final cost. This talk will examine these technology roadmap topics with a view toward technology bring-up.