Design, technology and yield in the post-moore era

G. Yeric
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引用次数: 0

Abstract

Looking forward along the technology roadmap, we see a complex, shifting landscape in which to attempt to ramp yield. Optical lithography is not providing any direct scaling benefit, and the available workarounds such as multiple patterning and mix-and-match lithography techniques greatly complicate design-technology co-optimization (DTCO) and yield/cost understanding. The silicon FinFET will give way to nanowires and/or new channel materials, and eventually force the examination of entirely new transistor topologies. Interconnect R's and C's will upset the FET/wire balance and with it some of our accumulated design/yield understanding, and reliability will play an increasing role in the determination of final cost. This talk will examine these technology roadmap topics with a view toward technology bring-up.
后摩尔时代的设计、技术和产量
展望未来的技术路线图,我们看到了一个复杂的、不断变化的环境,试图提高产量。光学光刻没有提供任何直接的缩放效益,而现有的解决方案,如多模式和混合匹配光刻技术,极大地复杂化了设计技术协同优化(DTCO)和产量/成本的理解。硅FinFET将让位给纳米线和/或新的通道材料,并最终迫使研究全新的晶体管拓扑结构。互连R和C将破坏FET/线的平衡,以及我们积累的一些设计/良率理解,可靠性将在确定最终成本方面发挥越来越大的作用。本讲座将从技术提升的角度来探讨这些技术路线图主题。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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