Spectroscopic and catalytic evidence for the incorporation of gallium in the AEL framework

Francisco J. Machado, Carmen M. López, José Goldwasser, Bernardo Méndez, Yván Campos, Douglas Escalante, Miguel Tovar, María M. Ramírez-Agudelo
{"title":"Spectroscopic and catalytic evidence for the incorporation of gallium in the AEL framework","authors":"Francisco J. Machado,&nbsp;Carmen M. López,&nbsp;José Goldwasser,&nbsp;Bernardo Méndez,&nbsp;Yván Campos,&nbsp;Douglas Escalante,&nbsp;Miguel Tovar,&nbsp;María M. Ramírez-Agudelo","doi":"10.1016/S0144-2449(97)00113-9","DOIUrl":null,"url":null,"abstract":"<div><p><sup>71</sup>Ga <em>MAS</em> n.m.r. analysis and the catalytic behavior during the transformation of 1-butene and <em>n</em>-butane strongly suggest the incorporation of Ga into the AlPO<sub>4</sub>-11 (AEL) framework during the synthesis of GaAPSO-11. A unique clear signal at around +120 ppm is proposed to be associated with the presence of tetrahedral Ga in the AEL framework of the unmodified GaAPSO-11. Migration of structural Ga atoms to the silicon domain of the AEL framework seems to occur as a result of a mild hydrothermal treatment, giving rise to an additional signal at +156 ppm, previously associated with tetrahedral gallium in gallosilicates with the MFI topology. The fact that GaAPO-11 and GaAPSO-11 behaved in a way similar to their counterparts AlPO<sub>4</sub>-11 and SAPO-11 during the skeletal isomerization of <em>n</em>-butenes reinforces the idea of an isomorphous substitution of Al(III) by Ga(III) in the AEL framework. The transformation of <em>n</em>-butane was shown to be a valuable test for detecting the presence of small amounts of hydro-dehydrogenating extraframework gallium species (EFGS) in Ga-supported SAPO-11 (Ga/SAPO-11). The fact that the sample of GaAPSO-11 was completely inactive for this transformation leads us to believe that the incorporation of gallium into the tetrahedral positions of the AEL framework was almost complete.</p></div>","PeriodicalId":23983,"journal":{"name":"Zeolites","volume":"19 5","pages":"Pages 387-394"},"PeriodicalIF":0.0000,"publicationDate":"1997-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S0144-2449(97)00113-9","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Zeolites","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0144244997001139","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11

Abstract

71Ga MAS n.m.r. analysis and the catalytic behavior during the transformation of 1-butene and n-butane strongly suggest the incorporation of Ga into the AlPO4-11 (AEL) framework during the synthesis of GaAPSO-11. A unique clear signal at around +120 ppm is proposed to be associated with the presence of tetrahedral Ga in the AEL framework of the unmodified GaAPSO-11. Migration of structural Ga atoms to the silicon domain of the AEL framework seems to occur as a result of a mild hydrothermal treatment, giving rise to an additional signal at +156 ppm, previously associated with tetrahedral gallium in gallosilicates with the MFI topology. The fact that GaAPO-11 and GaAPSO-11 behaved in a way similar to their counterparts AlPO4-11 and SAPO-11 during the skeletal isomerization of n-butenes reinforces the idea of an isomorphous substitution of Al(III) by Ga(III) in the AEL framework. The transformation of n-butane was shown to be a valuable test for detecting the presence of small amounts of hydro-dehydrogenating extraframework gallium species (EFGS) in Ga-supported SAPO-11 (Ga/SAPO-11). The fact that the sample of GaAPSO-11 was completely inactive for this transformation leads us to believe that the incorporation of gallium into the tetrahedral positions of the AEL framework was almost complete.

光谱和催化证据的结合镓在AEL框架
在GaAPSO-11的合成过程中,Ga在AlPO4-11 (AEL)框架中被掺入。在+120 ppm左右,一个独特的清晰信号被提出与未修饰的GaAPSO-11的AEL框架中四面体Ga的存在有关。结构Ga原子迁移到AEL框架的硅畴似乎是温和水热处理的结果,在+156 ppm时产生额外的信号,以前与具有MFI拓扑结构的低硅硅酸盐中的四面体镓有关。在正丁烯的骨架异构化过程中,GaAPO-11和GaAPSO-11的行为方式与它们的对应物AlPO4-11和SAPO-11相似,这一事实加强了在AEL框架中Al(III)被Ga(III)同构取代的观点。正丁烷的转化被证明是检测Ga负载的SAPO-11 (Ga/SAPO-11)中存在少量氢化脱氢的框架外镓(EFGS)的有价值的测试。GaAPSO-11样品对这种转变完全不活跃,这一事实使我们相信镓在AEL框架四面体位置的结合几乎完成了。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信