Structural, Morphological, Topographical, and Electrical Properties of Selenized Stacked CIGSe Layers by Evaporation Technique

2018 15th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE) Pub Date : 2018-09-01 DOI:10.1109/ICEEE.2018.8533910

G. Regmi, J. Narro-Rios, Adhikari Ashok, O. Nwakanma, S. Velumani, F. A. Pulgarin-Agudelo

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引用次数: 4

Abstract

Metallic elements copper (Cu), indium (In), and gallium (Ga) thin films for solar cell absorber layer were deposited by evaporation technique at ambient temperature and then the whole structure was selenized at various temperature ranging from 450 °C to 550 °C at different durations (30, 45 and 60 min). The effect of selenization on structural, morphological, topographical, and electrical properties of prepared films was studied. We observed a strong dependence of the properties of CIGSe films on the growth mechanism as well as the chemical composition. The results showed that 450 °C and 500 °C of selenization temperature was not sufficient for the inter-diffusion of all elements forming a good CIGSe absorber layer. Instead, the film selenized at 550 °C showed a better result which could be a good absorber layer for highly efficient CIGSe based thin film solar cells.

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蒸发技术研究硒化CIGSe堆叠层的结构、形态、形貌和电学性质

采用常温蒸发法制备了用于太阳能电池吸收层的金属元素铜(Cu)、铟(In)和镓(Ga)薄膜，然后在450 ~ 550℃的不同温度下，在30、45和60 min的时间内对整个结构进行硒化处理。研究了硒化对薄膜结构、形貌、形貌和电学性能的影响。我们观察到CIGSe薄膜的性能与生长机制和化学成分有很强的依赖性。结果表明，450°C和500°C的硒化温度不足以使所有元素相互扩散形成良好的CIGSe吸收层。相反，在550°C下硒化的薄膜表现出更好的效果，可以作为高效CIGSe薄膜太阳能电池的良好吸收层。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2018 15th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE)

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