DLTS study of proton and electron irradiated n/sup +/p InP MOCVD mesa diodes (solar cells)

Abstract

A study of proton irradiated InP junctions is described. Results are presented that show that the deep level transient spectroscopy (DLTS) spectra produced by 1 MeV electrons and 3 MeV protons in InP mesa diodes made using metalorganic chemical vapor deposition (MOCVD) are essentially the same. The results also show that there are some differences in the annealing behavior of the defects, especially following minority carrier injection at low temperatures.<>