Improved etching technique of E-ICP (Enhanced Inductively Coupled Plasma)

ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361) Pub Date : 1999-10-26 DOI:10.1109/ICVC.1999.820958

Jae-Seong Jeong, O. Beom-hoan, Se-Guen Park

引用次数: 0

Abstract

A novel technique, named as "Enhanced-ICP", for a better etch process, has been proposed. Here, we report an improved result of the E-ICP. A photo-resist etch uniformity of below 1% within 10 cm in diameter has been accomplished with improved plasma density and the low electron temperature of 1 eV.

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改进的E-ICP(增强电感耦合等离子体)刻蚀技术

提出了一种新的技术，称为“增强型icp”，用于更好的蚀刻工艺。在这里，我们报告了E-ICP的改进结果。在提高等离子体密度和1 eV的低电子温度下，在直径10 cm内实现了小于1%的光阻蚀刻均匀性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361)

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