Accurate multi-bias equivalent circuit model for graphene resonant channel transistors

Abstract

This paper presents a compact small signal equivalent circuit model of graphene resonant channel transistors (G-RCTs) suitable for different bias conditions. The model combines a bias dependent model for a GFET with a continuum mechanics model for 2-D graphene membrane. The model has been validated by graphene resonators fabricated by mechanical exfoliation techniques and transfer techniques. The characterization of G-RCT at very wide gate bias range with Vgs from -20 to 20V is predicted for the first time by using equivalent circuit model, which proves the validation of the proposed model. With the proposed compact model, the RCTs can be useful for developing high sensitivity sensor, or in the perspective of high quality RF filters by using graphene nano-electromechanical systems (NEMS).