Reduced Operation Current of Oxygen-Doped ZrN Based Resistive Switching Memory Devices Fabricated by the Radio Frequency Sputtering Method

Jinsu Jung, Dongjoo Bae, Sungho Kim, Hee-Dong Kim
{"title":"Reduced Operation Current of Oxygen-Doped ZrN Based Resistive Switching Memory Devices Fabricated by the Radio Frequency Sputtering Method","authors":"Jinsu Jung, Dongjoo Bae, Sungho Kim, Hee-Dong Kim","doi":"10.3390/COATINGS11020197","DOIUrl":null,"url":null,"abstract":"In this work, we report the feasibility of resistive switching (RS) properties of oxygen-doped zirconium nitride (O-doped ZrN) films with platinum (Pt) and platinum silicide (PtSi) bottom electrode (BE), produced by a sputtering method. Compared to O-doped ZrN using Pt BE, when Pt/p-Si was used as BE, the foaming voltage slightly increased, but the operation current was reduced by about two orders. In particular, the average reset current of the O-doped ZrN memory cells was reduced to 50 µA, which can delay deterioration of the element, and reduces power consumption. Therefore, the use of PtSi as the BE of the O-doped ZrN films is considered highly effective in improving reliability through reduction of operating current of the memory cells.","PeriodicalId":22482,"journal":{"name":"THE Coatings","volume":"616 1","pages":"197"},"PeriodicalIF":0.0000,"publicationDate":"2021-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"THE Coatings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.3390/COATINGS11020197","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

Abstract

In this work, we report the feasibility of resistive switching (RS) properties of oxygen-doped zirconium nitride (O-doped ZrN) films with platinum (Pt) and platinum silicide (PtSi) bottom electrode (BE), produced by a sputtering method. Compared to O-doped ZrN using Pt BE, when Pt/p-Si was used as BE, the foaming voltage slightly increased, but the operation current was reduced by about two orders. In particular, the average reset current of the O-doped ZrN memory cells was reduced to 50 µA, which can delay deterioration of the element, and reduces power consumption. Therefore, the use of PtSi as the BE of the O-doped ZrN films is considered highly effective in improving reliability through reduction of operating current of the memory cells.
射频溅射法制备氧掺杂ZrN基阻性开关存储器件的减小工作电流
在这项工作中,我们报告了用溅射方法制备的具有铂(Pt)和硅化铂(PtSi)底电极(BE)的氧掺杂氮化锆(o掺杂ZrN)薄膜的电阻开关(RS)特性的可行性。与使用Pt BE掺杂o掺杂ZrN相比,当使用Pt/p-Si作为BE时,发泡电压略有提高,但工作电流降低了约两个数量级。特别是,掺o的ZrN存储单元的平均复位电流降低到50µA,可以延缓元件的劣化,降低功耗。因此,使用PtSi作为o掺杂ZrN薄膜的BE被认为是非常有效的,可以通过降低存储单元的工作电流来提高可靠性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信