Design of a radiation-tolerant high-speed driver for Mach Zender Modulators in High Energy Physics

G. Magazzú, G. Ciarpi, S. Saponara
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引用次数: 6

Abstract

This paper presents the integrated circuit design, targeting a CMOS 65 nm 1.2 V technology, of a high-speed driver that provides the differential input signals to a Mach Zender Modulator (MZM), and allows tuning of the MZM operating point through adjustment of the bias voltage. A multi-voltage domain circuit is proposed, where each domain is isolated through deep n-well trenches, to face the high voltage swing and the bias regulation requirements of the MZM. The MZM device, whose prototype has been implemented in silicon photonics iSiPP50G technology, is emerging as a promising solution for radiation tolerant, several hundreds of Mrad, and high-speed, in the range of 10 Gbps, optical links. These stringent requirements are needed in high energy physics experiments in the upgrade of the Large Hadron Collider or in future Linear Colliders.
高能物理中马赫增德调制器耐辐射高速驱动器的设计
本文以CMOS 65 nm 1.2 V技术为目标,提出了一种高速驱动器的集成电路设计,该驱动器为Mach - Zender调制器(MZM)提供差分输入信号,并通过调整偏置电压来调节MZM工作点。针对MZM的高电压摆幅和偏置调节要求,提出了一种多电压域电路,每个域通过深n井沟槽隔离。MZM设备的原型已经在硅光子学iSiPP50G技术中实现,它正在成为一种有前途的耐辐射解决方案,具有数百Mrad和10 Gbps范围内的高速光链路。这些严格的要求在大型强子对撞机升级或未来的线性对撞机的高能物理实验中都是需要的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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