Pressure dependence of field induced SDW states of (TMTSF)2ClO4 from the magnetoresistance at 1.5 K

G. Creuzet, J. Cooper, F. Creuzet, D. Jérome, A. Moradpour
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引用次数: 5

Abstract

We report magnetoresistance measurements for single crystals of the organic conductor (TMTSF) 2 ClO 4 at pressures up to 1.5 kbars, at 1.5 K in fields up to 11.4 T along the c*-direction. It is found that both the threshold field for the onset of the spin density wave (SDW) state and the other characteristic fields, which probably represent SDW-SDW transitions, increase strongly with pressure. In addition the pressure dependence of other quantities, the anion ordering temperature, magnetoresistance and resistivity in the metallic state are briefly reported Etude experimentale sur monocristaux pour des pressions jusqu'a 1,5 kbars et des champs magnetiques jusqu'a 11,4 T, appliques selon l'axe c: le champ seuil correspondant a l'apparition de l'etat d'onde de densite de spin et tous les autres champs caracteristiques, probablement lies a des transitions entre etats d'onde de densite de spin, augmentent rapidement avec la pression. Temperature de mise en ordre des anions, magnetoresistance et resistivite dans l'etat metallique
(TMTSF)2ClO4在1.5 K磁阻下场致SDW态的压力依赖性
我们报道了有机导体(TMTSF) 2 clo4单晶在1.5 kbar压力下的磁电阻测量,在1.5 K下,沿着c*方向高达11.4 T的磁场。发现自旋密度波(SDW)状态起始的阈值场和其他可能代表SDW-SDW跃迁的特征场都随着压力的增加而强烈增加。此外,本文还简要介绍了负离子有序温度、磁阻和金属态电阻率的压力依赖性。Le champ seuil对应于l'幻影,l 'onde, l 'onde,致密自旋,l 'onde,致密自旋,l 'onde,致密自旋,增强加速和压缩。温度按阴离子、磁阻和电阻率的顺序变化,而不是按金属的顺序变化
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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