Galvano-thermomagnetic phenomena and the figure of merit in bismuth—II survey of experimental data and calculation of device parameters

Abstract

Transport theory, developed in a preceding paper [1] for pure Bi, is used to predict numerical values for various transport coefficients at The various effective masses, relaxation times, and mobilities relative to the pseudosymmetry axes are tabulated. Expressions are derived for the figures of merit and anisotropy parameters for a variety of limiting cases. The numerical predictions are again in substantial accord with direct experimental measurements.