A 28nm CMOS ultra-compact thermal sensor in current-mode technique

M. Eberlein, Idan Yahav
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引用次数: 28

Abstract

This paper describes an innovative architecture for temperature sensors, which achieves excellent linearity at minimum complexity. Fabricated in 28nm, the circuit occupies only 0.0038mm2 and draws 16μA from 1.8V, capable also for lower supplies. The 8-bit smart sensor operates from -20 to 130°C and utilizes the benefits of parasitic NPN transistor. Current-mode technique is adopted in a new way, which simplifies digital output and makes common error correction dispensable. Excellent PSRR and a raw accuracy of 1.8°C (3σ) is obtained without calibration, due to the inherent robustness against MOS mismatch. Precision can be increased to ~ +/-0.8°C by convenient single point soft-trimming. (smart thermal sensor, current-mode, NPN bipolar, CMOS)
采用电流模式技术的28nm CMOS超紧凑热传感器
本文描述了一种创新的温度传感器结构,该结构以最小的复杂性实现了优异的线性度。该电路采用28nm工艺,占地面积仅为0.0038mm2,从1.8V输出16μA,也可用于更低的电源。8位智能传感器工作范围为-20至130°C,并利用了寄生NPN晶体管的优点。采用了新的电流模式技术,简化了数字输出,省去了常见的纠错。由于对MOS失配具有固有的鲁棒性,因此无需校准即可获得出色的PSRR和1.8°C (3σ)的原始精度。通过方便的单点软修边,精度可提高到~ +/-0.8°C。(智能热传感器,电流模式,NPN双极,CMOS)
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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