ZnSe-facet-passivated InGaAs/InGaAsP/InGaP diode lasers of high cw power and "wallplug" efficiency

Summaries of papers presented at the Conference on Lasers and Electro-Optics Pub Date : 1996-06-02 DOI:10.1049/EL:19960251

A. Syrbu, V. Yakovlev, G. Suruceanu, A. Mereutza, L. Mawst, A. Bhattacharya, M. Nesnidal, J. Lopez, D. Boetz

引用次数: 20

Abstract

Summary form only given. We report on the cw performance of optimized facet-coated InGaAs/InGaAsP/InGaP (/spl lambda/=0.95 /spl mu/m) diode lasers as well as on the improvement in their performance as the facets are passivated by in-situ growth of ZnSe half-wave films. The results represent record-high values for both front-facet-emitted cw power: 2.9 W, as well as maximum cw wallplug efficiency: 54%.

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高连续波功率和“壁插式”效率的znse面钝化InGaAs/InGaAsP/InGaP二极管激光器

只提供摘要形式。本文报道了优化后的晶面涂层InGaAs/InGaAsP/InGaP (/spl λ /=0.95 /spl mu/m)二极管激光器的连续波性能，以及通过原位生长ZnSe半波膜钝化晶面对其性能的改善。结果表明，前面发射的连续波功率达到了创纪录的2.9 W，最大连续波壁塞效率达到了54%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Summaries of papers presented at the Conference on Lasers and Electro-Optics

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