Numerical simulation of the temperature field dynamics in single-crystalline silicon at repetitively-pulsed high-intensity ion implantation and energy impact of beam on the surface

Abstract

Methods to modify surface and near-surface layers of materials and coatings by ion beams are used in many fields of science and technology. The method of high-intensity implantation by high-power density ion beams with submillisecond duration involves significant pulsed heating of the irradiated target’s near-surface layer, followed by its rapid cooling due to heat transfer into the material due to thermal conductivity and the implementation of repetitively-pulsed radiation-enhanced diffusion of atoms to depths exceeding the projective ion range. Using the numerical simulation, this work studies the dynamics of changes in temperature fields into silicon wafer under single-pulse and repetitively-pulsed exposure to submillisecond titanium ion beam with a pulsed power density in the range up to 109 W/m2. The conditions are determined under which the temperature in the ion-doped layer will correspond to the conditions of radiation-stimulated diffusion of the implanted element, and the temperature in the matrix material will not deteriorate its microstructure and properties.