Optical orientation of spin polarized holes in bulk GaAs

Postconference Digest Quantum Electronics and Laser Science, 2003. QELS. Pub Date : 2003-06-06 DOI:10.1109/QELS.2003.237946

D. Hilton, C. L. Tang

引用次数: 0

Abstract

Optical orientation of spin-polarized heavy and light holes followed by relaxation to other valence subband states has been observed unambiguously in undoped bulk GaAs. The spin relaxation time for the heavy holes is 110 fs /spl plusmn/ 10%.

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块体砷化镓中自旋极化空穴的光学取向

在未掺杂的块体砷化镓中明确地观察到自旋极化重空穴和轻空穴的光学取向，然后弛豫到其他价子带态。重孔的自旋弛豫时间为110 fs /spl + usmn/ 10%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Postconference Digest Quantum Electronics and Laser Science, 2003. QELS.

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