Preparation of LNBN thin films by RF sputtering and their dielectric properties

Abstract

(LaNa)/sub 0.5/Bi/sub 2/Nb/sub 2/O/sub 9/ (LNBN) thin films have been prepared by RF sputtering with substrate temperatures up to 450 degrees C. The structural orientation of the annealed films versus substrate temperature is shown to be complex. The substrate temperature had a profound influence on the dielectric properties of the LNBN thin films. The LNBN thin films display a relaxation phase transition.<>