The Effect of Low-temperature Annealing on the Structure and Chemical Composition of Cu2 ZnSnS4 Films Deposited on Flexible Polyimide Substrates

R. Pshenychnyi, S. Kakherskyi, O. Dobrozhan, D. Kurbatov, A. Opanasyuk
{"title":"The Effect of Low-temperature Annealing on the Structure and Chemical Composition of Cu2 ZnSnS4 Films Deposited on Flexible Polyimide Substrates","authors":"R. Pshenychnyi, S. Kakherskyi, O. Dobrozhan, D. Kurbatov, A. Opanasyuk","doi":"10.1109/NAP51477.2020.9309580","DOIUrl":null,"url":null,"abstract":"This work presents the results of a comprehensive study of the structural characteristics and chemical composition of $\\mathrm{c}_{\\mathrm{u}2}$znSnS4 (CZTS) nanocrystals and thin films. Appropriate layers were deposited onto the flexible polyimide substrates by spraying a suspension of nanocrystals followed by low-temperature annealing at $200^{\\circ}\\mathrm{C}$ for (10-120) min in Ar atm. The study of the samples by XRD and Raman spectroscopy showed that nanocrystals and CZTS thin films contain the kesterite phase with small impurities of CuxSnySz. Established that the chemical composition of the obtained films corresponds to the composition of the nanocrystals used for its application in solar cell development. Increasing the growth time of nanocrystals and annealing time of films causes an improvement in the crystalline quality of the main phase of the samples - kesterite. Showed that the CZTS thin films obtained by the presented method can be used as absorbers in third-generation solar cells.","PeriodicalId":6770,"journal":{"name":"2020 IEEE 10th International Conference Nanomaterials: Applications & Properties (NAP)","volume":"40 1","pages":"01NSSA12-1-01NSSA12-5"},"PeriodicalIF":0.0000,"publicationDate":"2020-11-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE 10th International Conference Nanomaterials: Applications & Properties (NAP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NAP51477.2020.9309580","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

This work presents the results of a comprehensive study of the structural characteristics and chemical composition of $\mathrm{c}_{\mathrm{u}2}$znSnS4 (CZTS) nanocrystals and thin films. Appropriate layers were deposited onto the flexible polyimide substrates by spraying a suspension of nanocrystals followed by low-temperature annealing at $200^{\circ}\mathrm{C}$ for (10-120) min in Ar atm. The study of the samples by XRD and Raman spectroscopy showed that nanocrystals and CZTS thin films contain the kesterite phase with small impurities of CuxSnySz. Established that the chemical composition of the obtained films corresponds to the composition of the nanocrystals used for its application in solar cell development. Increasing the growth time of nanocrystals and annealing time of films causes an improvement in the crystalline quality of the main phase of the samples - kesterite. Showed that the CZTS thin films obtained by the presented method can be used as absorbers in third-generation solar cells.
低温退火对柔性聚酰亚胺基板上Cu2 ZnSnS4薄膜结构和化学成分的影响
本文介绍了$\ mathm {c}_{\ mathm {u}2}$znSnS4 (CZTS)纳米晶体和薄膜的结构特征和化学成分的综合研究结果。将纳米晶体悬浮液喷涂到柔性聚酰亚胺衬底上,然后在氩气中以200^{\circ}\ mathm {C}$低温退火(10-120)min。XRD和拉曼光谱分析表明,纳米晶和CZTS薄膜中含有少量CuxSnySz杂质的kesterite相。确定所得薄膜的化学成分与用于太阳能电池开发的纳米晶体的化学成分相对应。延长纳米晶的生长时间和薄膜的退火时间,可使样品的主相kesterite的结晶质量得到改善。结果表明,该方法制备的CZTS薄膜可作为第三代太阳能电池的吸收剂。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信