Scaling challenges of FinFET technology at advanced nodes and its impact on SoC design (Invited)

S. Banna
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引用次数: 4

Abstract

With the introduction of FinFET technology in mass production, more designs and complex designs are being ported on 22nm and 14nm/16nm FinFET transistors. However, all FinFET transistors are not made equal to offer best System-on-Chip (SoC) performance and power benefits. Careful selection of fin structural parameters is critical for best SoC performance. This paper discusses FinFET scaling challenges, their impact on SoC performance, key trade-offs and possible solutions for best SoC performance at current and future technology nodes.
FinFET技术在先进节点上的扩展挑战及其对SoC设计的影响(特邀)
随着FinFET技术的量产,越来越多的设计和复杂的设计被移植到22nm和14nm/16nm FinFET晶体管上。然而,并非所有FinFET晶体管都能提供最佳的片上系统(SoC)性能和功耗优势。仔细选择鳍结构参数是最佳SoC性能的关键。本文讨论了FinFET的缩放挑战,它们对SoC性能的影响,关键权衡以及当前和未来技术节点上最佳SoC性能的可能解决方案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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