Short Channel Effects Characterization of 3-D FinFET for High-k Gate Dielectrics

Abstract

In modern technology FinFET replaces MOSFET as aggressive technology scaling as per Moore's law has led to elevated power dissipation levels owing to short channel effects. In this research, we focused on different FinFET structures. We compared short channel effects, such as Ion/Ioff ratio, threshold voltage roll-off and subthreshold swing of Double gate FinFET (DGFinFET) and Tri-Gate FinFET (TGFinFET) for different high-k dielectric material. The structures were designed for 22 nm technology. Also, effect of different dielectric material on different underlap length of TGFinFET is discussed in our work.