{"title":"A 51 pW reference-free capacitive-discharging oscillator architecture operating at 2.8 Hz","authors":"Hui Wang, P. Mercier","doi":"10.1109/CICC.2015.7338395","DOIUrl":null,"url":null,"abstract":"This paper presents a gate-leakage-based Hz-range oscillator that achieves ultra-low-power frequency-stable operation in a small area via a capacitive-discharging architecture. By pre-charging two capacitors to VDD, and then allowing one to discharge through a temperature stable discharging path, an accurate clock period is generated independent of VDD and without a power-expensive reference. By exploiting the opposite temperature dependencies of different gate-leakage transistors, a stable oscillation frequency is achieved. Implemented in a 65 nm CMOS process, the proposed oscillator consumes 51 pW at 2.8 Hz. Across a temperature range of -40 °C to 60 °C, the oscillator deviates down to ±0.05% /°C, enabling an accurate, low-cost, low-power timing solution at Hz-range frequency.","PeriodicalId":6665,"journal":{"name":"2015 IEEE Custom Integrated Circuits Conference (CICC)","volume":"40 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE Custom Integrated Circuits Conference (CICC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2015.7338395","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 13
Abstract
This paper presents a gate-leakage-based Hz-range oscillator that achieves ultra-low-power frequency-stable operation in a small area via a capacitive-discharging architecture. By pre-charging two capacitors to VDD, and then allowing one to discharge through a temperature stable discharging path, an accurate clock period is generated independent of VDD and without a power-expensive reference. By exploiting the opposite temperature dependencies of different gate-leakage transistors, a stable oscillation frequency is achieved. Implemented in a 65 nm CMOS process, the proposed oscillator consumes 51 pW at 2.8 Hz. Across a temperature range of -40 °C to 60 °C, the oscillator deviates down to ±0.05% /°C, enabling an accurate, low-cost, low-power timing solution at Hz-range frequency.