A Method for Measuring the Resistivity of a Layered Semiconductor Perpendicular to the Layers

Machine learning and interpretation in neuroimaging : international workshop, MLINI 2011, held at NIPS 2011, Sierra Nevada, Spain, December 16-17, 2011 : revised selected and invited contributions. MLINI (Workshop) (2011 : Sierra Nevada... Pub Date : 1988-12-16 DOI:10.1002/PSSA.2211100232

F. Pomer, J. Navasquillo

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Abstract

The current distribution within a layered semiconductor sample when a potential difference is applied to two contacts deposited on opposite faces is obtained from the numerical solution for the potential. From this solution a method for determining the resistivity of the sample perpendicular to the layers is derived, when the resistivity along the layers is known. Aus der numerischen Losung fur das Potential wird die Stromverteilung in einer geschichteten Halbleiterprobe bestimmt, an der an zwei auf entgegengesetzten Flachen angebrachten Kontakten eine Potentialdifferenz gelegt wird. Aus dieser Losung wird eine Methode zur Bestimmung der Leitfahigkeit der Probe senkrecht zu den Schichten abgeleitet, wenn der Widerstand in Schichtrichtung bekannt ist.

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一种垂直于层状半导体层间电阻率的测量方法

犯人之间有可能产生分化现象根据接触号决定从这个解决问题的方法来决定那些黑奴的生存利用代替潜在能量的数值解决方案，在一种半导体样本中决定能量分配的位置，该样本使用两种可能的替代电极激活器。以这样的活动为结尾，对试探之有必要以自有对立面为中心。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Machine learning and interpretation in neuroimaging : international workshop, MLINI 2011, held at NIPS 2011, Sierra Nevada, Spain, December 16-17, 2011 : revised selected and invited contributions. MLINI (Workshop) (2011 : Sierra Nevada...

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