Structure of surfaces and interfaces as studied using synchrotron radiation. Liquid surfaces

P. Pershan
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引用次数: 77

Abstract

The use of specular reflection of X-rays to study the structure of the liquid/vapour interfaces along the direction normal to the surface is described. If RF(θ) is the theoretical Fresnel reflection law for X-rays incident on an ideal flat surface at an angle θ, and R(θ) is the measured reflectivity from the true surface, the ratio R(θ)/RF(θ) is a measure of the electron density along the surface normal; i.e.R(θ)//RF(θ)≈|1//p∞∫∂〈p(z)〉//∂z exp (iQzz) dz|2. where p∞ is the electron density far from the surface, ∂〈p(z)〉/∂z is the gradient of the average electron density along the surface normal and Qz=(4π/λ) sin (θ). For simple liquids p–1∞∂〈p〉/∂z≈[1/√(2πσ2)] exp (–z2/2σ2), and R(θ)/RF(θ)≈ exp (–Q2σ2), where σ2 is dominated by the mean-square average of thermally excited fluctuations in the height of the surface. For liquid crystals and for lyotropic miceller systems temperature-dependent structure in R(θ) is due to surface-induced layering in 〈p(z)〉. Other experimental results from thin layers of liquid 4He and monolayers, of amphiphathic molecules on the surface of H2O will be described. The possibility of complementing specular reflectivity measurements of surface roughness by studying diffuse scattering at small angles off of the specular condition will also be illustrated with results from the H2O surface.
用同步辐射研究表面和界面结构。液体的表面
描述了利用x射线的镜面反射来研究沿表面法线方向的液/气界面结构。如果RF(θ)是x射线以θ角入射到理想平面上的菲涅耳反射定律,R(θ)是测量到的真实表面的反射率,则R(θ)/RF(θ)的比值是沿表面法线的电子密度的度量;i.e.R(θ)/ /射频(θ)≈| 1 / / p∞∫∂< p (z) > / /∂z exp (iQzz) dz | 2。其中p∞是远离表面的电子密度,∂< p(z) > /∂z是沿表面法线的平均电子密度梯度,Qz=(4π/λ) sin (θ)。对于简单液体p - 1∞∂< p > /∂z≈[1/√(2πσ2)] exp (-z2/2σ2), R(θ)/RF(θ)≈exp (-Q2σ2),其中σ2由表面高度热激波动的均方平均支配。对于液晶和溶致胶团系统,R(θ)中的温度相关结构是由于< p(z) >中的表面诱导层。其他实验结果的液体层4He和单层,两相分子在水的表面将被描述。通过研究镜面条件下小角度的漫射散射来补充镜面反射率测量表面粗糙度的可能性也将用H2O表面的结果来说明。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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