Incident Flux Based Monte Carlo Simulation of Silicon and GaAs FETs in Quasi-Ballistic regime

Abstract

An incident flux based Monte Carlo particle simulation methodology has been developed which can be used to simulate any MOSFET. Incident flux Monte Carlo is a robust and intuitive method of device simulation because it can mimic the carrier transport in a physical device. The complete implementation has been done in an open source programming language called PYTHON. The simulations results are in good agreement with the existing results in the industry. The usability and advantage of our program have been shown by estimating backscattering coefficient, ballistic ratio and channel resistance of Silicon and GaAs quasi-ballistic devices. All the results that we have obtained can be used for better modeling of the electrical behavior of a quasi-ballistic device.