Design of a 128×128 Cryogenic Readout Circuit for Silicon-based Blocked-impurity-band Detector

Abstract

We have developed a $128 \times128$ cryogenic readout circuit suitable for Silicon-based Blocked-impurity-band detector by means of 0.18 m CMOS technology in this paper, which can be used at 6K temperature. Based on the extraction of parameters and the establishment of the cryogenic temperature model of MOSFET, we focus on the design of the pixel circuit and readout mode. In the design, the correlated double sampling technology is also used to reduce the noise generated in the channel. The designed readout circuit can work at both room temperature and 6K, where the working frequency is 1MHz, the maximum power consumption is 127.38mW, and the output swing is about 2V.