Morphological and Structural Properties of Porous Silicon (PSi)

A. Kadhim, M. H. Alzubaidy, A. Abd
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引用次数: 3

Abstract

This study includes the effect of the etching time on the morphology of the surfaces produced using the electrochemical method of silicon ( p-type), where it was found that the etching leads to increase the porosity layer of silicon. The production of nanocrystalline structures and control of their production conditions is the first step to control the properties of the devices. These are very important applications for the etching of renewable energy.
多孔硅(PSi)的形态与结构特性
本研究包括蚀刻时间对硅(p型)电化学方法产生的表面形貌的影响,其中发现蚀刻导致硅的孔隙层增加。纳米晶结构的制备及其生产条件的控制是控制器件性能的第一步。这些都是可再生能源刻蚀的重要应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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