Protection Circuitry Design to Mitigate Failure Propagation for 10 kV SiC MOSFETs in a 22 kV DC 13.8 kV AC Flying Capacitor Multilevel Converter

IF 1 4区 工程技术 Q4 COMPUTER SCIENCE, INTERDISCIPLINARY APPLICATIONS
Arthur Mendes, David Nam, Xiang Lin, J. Stewart, B. Fan, D. Dong, R. Burgos
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引用次数: 0

Abstract

The operation and failure modes of the flying capacitor multilevel converter topology are well-known and the protections for Si IGBT-based converters are well established. However, when it comes to high voltage SiC MOSFET-based converters there are some particularities that must be evaluated: shorter energy withstanding time, higher dv/dt and higher insulation stress. This paper provides an assessment of the failure modes for a 7-level 13.8 kV AC 22 kV DC 1.1 MVA three-phase flying capacitor converter using 10 kVSiC MOSFETs, an analysis of the fault propagation mechanism between cells and the design of a transient voltage suppressor (TVS) diode-based protection module to prevent it.
22 kV直流13.8 kV交流飞电容多电平变换器中10 kV SiC mosfet失效传播的保护电路设计
飞电容多电平变换器的工作模式和失效模式是众所周知的,基于硅igbt的变换器的保护措施已经建立。然而,当涉及到高压SiC mosfet转换器时,必须评估一些特殊性:更短的能量承受时间,更高的dv/dt和更高的绝缘应力。本文对采用10 kVSiC mosfet的7级13.8 kV AC 22 kV DC 1.1 MVA三相飞容变换器的故障模式进行了评估,分析了单元间故障传播机制,并设计了基于瞬态电压抑制器(TVS)二极管的保护模块以防止故障传播。
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来源期刊
CiteScore
1.60
自引率
0.00%
发文量
124
审稿时长
4.2 months
期刊介绍: COMPEL exists for the discussion and dissemination of computational and analytical methods in electrical and electronic engineering. The main emphasis of papers should be on methods and new techniques, or the application of existing techniques in a novel way. Whilst papers with immediate application to particular engineering problems are welcome, so too are papers that form a basis for further development in the area of study. A double-blind review process ensures the content''s validity and relevance.
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