Luminescent properties and lattice defects correlation on zinc oxide

S.A.M Lima, F.A Sigoli, M Jafelicci Jr, M.R Davolos
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引用次数: 220

Abstract

The ZnO luminescent properties are strongly influenced by the preparation method and they are principally related to electronic and crystalline structures. This work reports about the correlation among luminescence properties of ZnO, obtained from zinc hydroxycarbonate, and crystalline lattice defects, microstrain, as function of thermal treatment. The crystallite size increase and the qualitative microstrain, obtained by Williamson–Hall plots, decrease as function of temperature. The evolution of electronic defects is analyzed by luminescence spectroscopy based on energy of the electronic transitions. From excitation spectrum, it is verified two bands around 377 nm and 405 nm attributed to the transitions between valence–conduction bands and valence band to interstitial zinc level, respectively. The emission spectra of sample treated at 600°C shows large band at 670 nm. However, the green emission around 530 nm is observed for samples treated at 900°C. The intensities of excitation and emission bands are associated with the increase of the electronic defects that depend on the strain lattice decrease. The lowest strain lattice results on the best green luminescent properties of zinc oxide.

氧化锌的发光特性与晶格缺陷的关系
ZnO的发光性能受制备方法的影响较大,主要与电子结构和晶体结构有关。本文报道了由羟基碳酸锌制备的ZnO的发光特性与晶格缺陷、微应变作为热处理函数的关系。通过Williamson-Hall图得到的定性微应变随温度的增加而减小。利用基于电子跃迁能量的发光光谱分析了电子缺陷的演化过程。从激发谱上验证了377 nm和405 nm左右的两个谱带分别属于价导带和价带向间隙锌水平的跃迁。600℃处理后的样品在670 nm处有较大的发射光谱。然而,在900°C处理的样品中,可以观察到530 nm左右的绿色发射。激发带和发射带的强度与电子缺陷的增加有关,这取决于应变晶格的减少。最低应变点阵是氧化锌的最佳绿色发光性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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