A Novel Electrical Isolation Solution for Tunnel FET Integration

Abstract

In this work, for bulk tunnel field-effect transistors (TFET), the electrical isolation solutions between neighboring devices for TFET integration are investigated. To suppress the leakage current of the P-type doped regions through the P-type substrate, a new effective isolation method is proposed and verified via simulation. The simulation shows the leakage current can be reduced from 10−5 A/µm to 10−13 A/µm. The solution is beneficial for TFETs to keep its advantages for ultra-low power applications such as implantable medical devices and Internet of Things.