A 192-Gb 12-High 896-GB/s HBM3 DRAM with a TSV Auto-Calibration Scheme and Machine-Learning-Based Layout Optimization

Abstract

Ever since the introduction of high bandwidth memory (HBM DRAM) and its succeeding line-ups, HBM DRAM has been heralded as a prominent solution to tackle the memory wall problem. However, despite continual memory advancements the advent of high-end systems, including supercomputers, hyper-scale data centers and machine learning accelerators, are expediting requirements for higher-performance memory solutions. To accommodate the increasing system-level demands, we introduce HBM3 DRAM, which employs multiple new features and design schemes. Techniques such as an on-die ECC engine, internal NN-DFE I/O signaling, TSV auto-calibration, and layout optimization based on machine-learning algorithms are implemented to efficiently control timing skew margins and SI degradation trade-offs. Furthermore, reduced voltage swings allow for improved memory bandwidth, density, power efficiency and reliability.