A new design of scanning IR detectors

IF 1.3 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
S. Dvoretsky, A. P. Kovchavtsev, I. I. Lee, V. G. Polovinkin, G. Sidorov, M. Yakushev
{"title":"A new design of scanning IR detectors","authors":"S. Dvoretsky, A. P. Kovchavtsev, I. I. Lee, V. G. Polovinkin, G. Sidorov, M. Yakushev","doi":"10.24425/opelre.2020.132505","DOIUrl":null,"url":null,"abstract":"Photoelectrical characteristics of scanning IR detectors with implemented time delay and integration mode are analyzed. A new “shifted cellular” layout of photosensitive elements in the FPA structure is proposed. Advantages of the new FPA configuration in terms of threshold sensitivity for small-size/point objects are demonstrated. The analysis is based on the Monte Carlo simulation of the diffusion process of photogenerated minority charge carriers in the photosensitive layer photodiode arrays. The analysis is performed taking into account the main photoelectric parameters of FPA elements: photosensitive layer thickness, diffusion length of charge carriers, optical absorption length, their design parameters: geometric sizes of FPA elements, diameters of p-n junctions, and design parameters of the optical system: optical-spot diameter.","PeriodicalId":54670,"journal":{"name":"Opto-Electronics Review","volume":null,"pages":null},"PeriodicalIF":1.3000,"publicationDate":"2023-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Opto-Electronics Review","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.24425/opelre.2020.132505","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

Photoelectrical characteristics of scanning IR detectors with implemented time delay and integration mode are analyzed. A new “shifted cellular” layout of photosensitive elements in the FPA structure is proposed. Advantages of the new FPA configuration in terms of threshold sensitivity for small-size/point objects are demonstrated. The analysis is based on the Monte Carlo simulation of the diffusion process of photogenerated minority charge carriers in the photosensitive layer photodiode arrays. The analysis is performed taking into account the main photoelectric parameters of FPA elements: photosensitive layer thickness, diffusion length of charge carriers, optical absorption length, their design parameters: geometric sizes of FPA elements, diameters of p-n junctions, and design parameters of the optical system: optical-spot diameter.
一种新型扫描红外探测器的设计
分析了实现时延和积分方式的扫描红外探测器的光电特性。提出了一种新的FPA结构中光敏元件的“移位细胞”布局。在小尺寸/点目标的阈值灵敏度方面,证明了新的FPA结构的优势。本文采用蒙特卡罗方法模拟了光敏层光电二极管阵列中光生少数载流子的扩散过程。分析考虑了FPA元件的主要光电参数:光敏层厚度、载流子扩散长度、光吸收长度,设计参数:FPA元件几何尺寸、pn结直径,光学系统设计参数:光斑直径。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Opto-Electronics Review
Opto-Electronics Review 工程技术-工程:电子与电气
CiteScore
1.90
自引率
12.50%
发文量
0
审稿时长
>12 weeks
期刊介绍: Opto-Electronics Review is peer-reviewed and quarterly published by the Polish Academy of Sciences (PAN) and the Association of Polish Electrical Engineers (SEP) in electronic version. It covers the whole field of theory, experimental techniques, and instrumentation and brings together, within one journal, contributions from a wide range of disciplines. The scope of the published papers includes any aspect of scientific, technological, technical and industrial works concerning generation, transmission, transformation, detection and application of light and other forms of radiative energy whose quantum unit is photon. Papers covering novel topics extending the frontiers in optoelectronics or photonics are very encouraged. It has been established for the publication of high quality original papers from the following fields: Optical Design and Applications, Image Processing Metamaterials, Optoelectronic Materials, Micro-Opto-Electro-Mechanical Systems, Infrared Physics and Technology, Modelling of Optoelectronic Devices, Semiconductor Lasers Technology and Fabrication of Optoelectronic Devices, Photonic Crystals, Laser Physics, Technology and Applications, Optical Sensors and Applications, Photovoltaics, Biomedical Optics and Photonics
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信