Thick Film Laser Sintering: An Evidence for Two-step Process

E. Antonelli, M. Andreeta, E. Botero, A. Hernandes
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引用次数: 1

Abstract

The results for the sintering of Bi4Ti3O12 (BIT)-doped BaTi0.85Zr0.15O3 (BTZ) thick films, deposited by electro- phoresis, using as heating source a CO2 laser are presented. The thermal process associated to the laser scanning sintering (LSS) acted in a similar way as a two-step-sintering process. This characteristic together with the high heating rate al- lowed us to obtain thick films with an average grain size of 200 nm, high relative density (~96%) and with a homogene- ous microstructure. The X ray diffraction profile analysis show evidences for Bi 3+ replacing Ba 2+ at the A sites.
厚膜激光烧结:两步工艺的证据
本文介绍了以CO2激光器为热源,电沉积Bi4Ti3O12 (BIT)掺杂BaTi0.85Zr0.15O3 (BTZ)厚膜的结果。与激光扫描烧结(LSS)相关的热过程与两步烧结过程类似。这种特性加上高加热速率使我们获得了平均晶粒尺寸为200 nm的厚膜,相对密度高(~96%),并且具有均匀的微观结构。X射线衍射分析表明,b3 +取代了Ba 2+。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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