Dynamics of development of thermal processes in semiconductor structures at the local effects of microwave radiation

Abstract

The present paper concerns the basic principles of the model of local effects of microwave radiation in semiconductor structures. The validity of the proposed model is based on the method of finite-difference time-domain (FDTD) is shown. The influence of radius of a spherical probe on the distribution and values of the field intensity in the axis of semiconductor structures is determined. Dynamics of development of thermal processes in the local region of semiconductor structures in a continuous mode with relation to electrophysical parameters on temperature are obtained.