E. Capogreco, H. Arimura, L. Witters, A. Vohra, C. Porret, R. Loo, A. De Keersgieter, E. Dupuy, D. Marinov, A. Hikavyy, F. Sebaai, G. Mannaert, L. Ragnarsson, Y. Siew, C. Vrancken, A. Opdebeeck, J. Mitard, R. Langer, E. Sanchez, F. Holstetns, S. Demuynck, K. Barla, V. De Heyn, D. Mocuta, N. Collaert, N. Horiguchi
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引用次数: 10
Abstract
This paper demonstrates high performance strained p-type double stacked Ge Gate-AlI-Around (GAA) devices at significantly reduced gate lengths $(\text{L}_{\text{G}}\sim 25\text{nm})$ compared to our previous work. Excellent electrostatic control is maintained down to $\text{L}_{\text{G}}=25$ nm by using extension-less scheme, while the performance is kept by appropriate spacer scaling and implementation of highly B-doped Ge or GeSn as source/drain (S/D) material.
本文展示了高性能的张力p型双堆叠Ge gate - ali - around (GAA)器件，与我们之前的工作相比，栅极长度$(\text{L}_{\text{G}}\sim 25\text{nm})$显著减少。通过采用无扩展方案，在$\text{L}_{\text{G}}=25$ nm的范围内保持良好的静电控制，同时通过适当的间隔缩放和采用高b掺杂的Ge或GeSn作为源/漏极(S/D)材料来保持性能。
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