Electrical conductivity and Hall effect in n-type CdS

IF 1.5 4区 材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY
Y. Kajikawa
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引用次数: 2

Abstract

ABSTRACT The experimental data of the temperature dependence of the electrical conductivity σ(T) and the Hall coefficient RH (T) on single crystal samples of n-type CdS reported in literature are reviewed and have been critically analysed including hopping conduction in an impurity band. It is shown that the experimental data of σ(T) and RH (T) reported in almost previous studies can be simultaneously fitted using a common set of the values of material parameters for calculating free-electron conduction, i.e. the conduction and the density-of-state effective mass of electrons, the acoustic-phonon deformation potential, the Fröhlich coupling constant and the piezoelectric coupling coefficient, whereas wide ranges of values for these material parameters had been adopted in different studies. The correct assignment of impurity conduction mechanisms in n-type CdS single crystals is presented. In addition, reasonable explanations are given for unresolved enigmas regarding impurity pairing, unexpected large Hall mobility at low temperatures, and the effect of electric field on hopping Hall mobility.
n型CdS的电导率和霍尔效应
摘要综述了文献报道的n型CdS单晶样品电导率σ(T)和霍尔系数RH (T)的温度依赖性实验数据,并对其杂质带的跳变传导进行了批判性分析。结果表明,几乎以往研究中报道的σ(T)和RH (T)的实验数据,可以用一组共同的材料参数值来同时拟合,用于计算自由电子的电导率,即电导率和电子的态密度有效质量、声子变形势、Fröhlich耦合常数和压电耦合系数。然而,在不同的研究中,这些材料参数的取值范围很广。给出了n型CdS单晶中杂质传导机制的正确分配。此外,对杂质配对、低温下意想不到的大霍尔迁移率以及电场对跳变霍尔迁移率的影响等未解之谜也给出了合理的解释。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Philosophical Magazine
Philosophical Magazine 工程技术-材料科学:综合
自引率
0.00%
发文量
93
审稿时长
4.7 months
期刊介绍: The Editors of Philosophical Magazine consider for publication contributions describing original experimental and theoretical results, computational simulations and concepts relating to the structure and properties of condensed matter. The submission of papers on novel measurements, phases, phenomena, and new types of material is encouraged.
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