Resonant electron attachment to oxygen impurities in dense Neon gas

A. Borghesani
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引用次数: 1

Abstract

Measurements of resonant electron attachment to O2 impurities in dense Ne gas at moderately low temperature T=80 K are here reported. The density-normalized attachment frequency shows a peak at a specific density. The present data are compared to previous results obtained in dense He gas at similar temperatures. Similarly to the He case, the present data are explained by assuming that the dense environment affects the energetics of the quasi-free electrons.
致密氖气中氧杂质的共振电子附着
本文报道了中低温T= 80k条件下致密Ne气体中氧杂质共振电子附着的测量结果。密度归一化依恋频率在特定密度处出现峰值。本文的数据与以前在相似温度下致密He气体中得到的结果进行了比较。与He的情况类似,假设致密环境影响准自由电子的能量学,可以解释目前的数据。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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