Effect of PIN diode nonlinearity on decoupler circuits in magnetic resonance imaging surface coils

IF 0.9 4区 医学 Q4 CHEMISTRY, PHYSICAL
Aasrith Ganti, Timothy Ortiz, Tracy Wynn, Jenshan Lin, R. Duensing
{"title":"Effect of PIN diode nonlinearity on decoupler circuits in magnetic resonance imaging surface coils","authors":"Aasrith Ganti, Timothy Ortiz, Tracy Wynn, Jenshan Lin, R. Duensing","doi":"10.1002/cmr.b.21398","DOIUrl":null,"url":null,"abstract":"Correspondence Aasrith Ganti, Philips Healthcare, Gainesville, FL and University of Florida, Gainesville, FL. Email: aasrith.ganti@philips.com Abstract Decoupler circuits are the primary circuits used to maintain safety and image quality in switching magnetic resonance imaging (MRI) surface coils. Decoupler circuits predominantly employ PIN diodes as a switch and their performance is most commonly calculated on the bench at DC and low power RF conditions. The effects of high‐power RF on PIN diode decoupler circuits are not usually measured. Experiments at high RF power levels reveal a decrease in the impedance of a typical decoupler as the PIN diode operates in the nonlinear region, effectively increasing the ON‐resistance of the PIN diode. The constraints that dictate the start of nonlinearities are studied, and ways to control these nonlinearities are presented. Furthermore, this work is used as a basis to extend and improve upon previous work that established figure of merit (FOM) for PIN diode decouplers. This study is a comprehensive guide for MRI coil designers who face the task of designing decoupler circuits for surface coils and are looking for tools to accurately estimate the dynamic impedance of the circuit over the course of an MRI sequence.","PeriodicalId":50623,"journal":{"name":"Concepts in Magnetic Resonance Part B-Magnetic Resonance Engineering","volume":"70 1","pages":""},"PeriodicalIF":0.9000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Concepts in Magnetic Resonance Part B-Magnetic Resonance Engineering","FirstCategoryId":"3","ListUrlMain":"https://doi.org/10.1002/cmr.b.21398","RegionNum":4,"RegionCategory":"医学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 2

Abstract

Correspondence Aasrith Ganti, Philips Healthcare, Gainesville, FL and University of Florida, Gainesville, FL. Email: aasrith.ganti@philips.com Abstract Decoupler circuits are the primary circuits used to maintain safety and image quality in switching magnetic resonance imaging (MRI) surface coils. Decoupler circuits predominantly employ PIN diodes as a switch and their performance is most commonly calculated on the bench at DC and low power RF conditions. The effects of high‐power RF on PIN diode decoupler circuits are not usually measured. Experiments at high RF power levels reveal a decrease in the impedance of a typical decoupler as the PIN diode operates in the nonlinear region, effectively increasing the ON‐resistance of the PIN diode. The constraints that dictate the start of nonlinearities are studied, and ways to control these nonlinearities are presented. Furthermore, this work is used as a basis to extend and improve upon previous work that established figure of merit (FOM) for PIN diode decouplers. This study is a comprehensive guide for MRI coil designers who face the task of designing decoupler circuits for surface coils and are looking for tools to accurately estimate the dynamic impedance of the circuit over the course of an MRI sequence.
PIN二极管非线性对磁共振成像表面线圈解耦电路的影响
Aasrith Ganti, Philips Healthcare, Gainesville, FL和Florida University, Gainesville, FL. Email: aasrith.ganti@philips.com摘要去耦电路是用于保持开关磁共振成像(MRI)表面线圈安全性和图像质量的主要电路。去耦电路主要采用PIN二极管作为开关,其性能通常在直流和低功率射频条件下的台架上计算。高功率射频对PIN二极管去耦电路的影响通常不被测量。在高射频功率水平下的实验表明,当PIN二极管工作在非线性区域时,典型解耦器的阻抗降低,有效地增加了PIN二极管的ON电阻。研究了非线性开始的约束条件,并给出了控制这些非线性的方法。此外,这项工作被用作扩展和改进先前工作的基础,该工作建立了PIN二极管去耦的品质因数(FOM)。这项研究是MRI线圈设计人员的综合指南,他们面临着设计表面线圈解耦电路的任务,并正在寻找工具来准确估计电路在MRI序列过程中的动态阻抗。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
CiteScore
2.60
自引率
0.00%
发文量
3
审稿时长
>12 weeks
期刊介绍: Concepts in Magnetic Resonance Part B brings together engineers and physicists involved in the design and development of hardware and software employed in magnetic resonance techniques. The journal welcomes contributions predominantly from the fields of magnetic resonance imaging (MRI), nuclear magnetic resonance (NMR), and electron paramagnetic resonance (EPR), but also encourages submissions relating to less common magnetic resonance imaging and analytical methods. Contributors come from both academia and industry, to report the latest advancements in the development of instrumentation and computer programming to underpin medical, non-medical, and analytical magnetic resonance techniques.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信