Residual Stress Analysis of a Cu2ZnSnS4 Thin Film

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) Pub Date : 2018-06-01 DOI:10.1109/PVSC.2018.8547475

Sungwook Hong, Chan Kim

引用次数: 0

Abstract

The aim of this study is to determine the residual stress within a CZTS thin film, which causes changes to several characteristics of the thin film, including the band gap energy and lattice constants. The CZTS thin film was manufactured using a metal precursor. The crystallization of the CZTS photo absorber was confirmed by XRD analysis, Raman spectrum, and HRTEM. The energy of the band gap of the CZTS thin film was found to be 1.47eV, and the crystalline structure was determined to be under a compressive residual stress of 15.269 MPa.

查看原文本刊更多论文

Cu2ZnSnS4薄膜的残余应力分析

本研究的目的是确定CZTS薄膜内的残余应力，这导致薄膜的几个特性，包括带隙能量和晶格常数的变化。采用金属前驱体制备了CZTS薄膜。通过XRD分析、拉曼光谱分析和HRTEM分析证实了CZTS吸光剂的结晶性。测得CZTS薄膜带隙能量为1.47eV，残余压应力为15.269 MPa。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)

自引率

0.00%

发文量