Electrical and optical properties of Ni/sup 3+/ in p-type InP

Abstract

Deep level transient spectroscopy (DLTS), deep level optical spectroscopy (DLOS), and optical absorption (OA) measurements were performed on Ni diffused p-type InP to find the position of the single acceptor level of Ni in InP and to characterize optically the Ni/sup 3+/ state. DLTS enabled the identification of Ni acceptor levels in InP and the determination of its activation energy and its hole capture cross-section. Using DLOS an optical photoionization cross-section of the Ni/sup 3+/ to Ni/sup 2+/ transition was found.<>