THERMODYNAMICALLY STABLE PHASES OF THE Ag9GaSe6 – Ag8GeSe6 SYSTEM AT T<600 K AND THEIR PHYSICO-CHEMICAL PROPERTIES

M. Moroz, P. Demchenko, Myroslava Prohorenko, Ludmila Soliak, Serhii Prohorenko, O. Reshetnyak
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Abstract

The synthesis of thermodynamically stable phases of the Ag9GaSe6–Ag8GeSe6 (І) system at T<600 K were performed in the electrochemi­cal cells (ECCs): (−) С | Ag | SЕ | R(Ag+) | PЕ | С (+), where C is graphite, Ag is the left (negative) electrode, SE is the purely Ag+ ion conducting solid electrolyte (Ag2GeS3-glass), PE is the right (positive) electrode, and R(Ag+) is the region of PE that contact with SE. PEs of ECCs were prepared from finely ground non-equilibrium mixtures of the compounds (Ag9GaSe6)1–х and (Ag8GeSe6)х, х=0.05, 0.1, 0.2, … , 0.9. Shifted from the left electrode to the R(Ag+) region for thermodynamic reasons Ag+ ions acted as the nucleation centers for the equilibrium phases of the x compositions, that is as the catalysts for reconstruction of the metastable mixtures of ternary compounds. The reproducibility of the EMF vs T dependences in the heating-cooling cycles is a result of the completion of reconstruction in the R(Ag+) region. Experimental dependences EMF vs T of ECCs with PE of mixtures of compounds indicated x, ECCs with PE of the Ag9GaSe6 and Ag8GeSe6 compounds are charac­terized by several discrete linear regions with different temperature intervals and functional dependences on temperature. The equations of the temperature dependences of the partial Gibbs energies of Ag-component in alloys for each discrete section of the specific x=0, 0.3, 0.5, 0.7, 1.0 were established for the first time and values of the standard partial functions  were calculated. The bypass lines drawn through the points of EMF values of the cells at T=const for arbitrarily selected temperatures 298 K, 341 K, 395 K, 445 K, and 495 K in the range 280-500 K determine the phase composition of the equilibrium T-x space of (I) as: a solid solution based on compound Ag17GaGeSe12 in the range of 0.25≤x≤0.75, solid solutions based on the compounds (Ag9GaSe6)1–х for 0≤х≤0.15 and (Ag8GeSe6)х for 0.83≤х≤1, and two two-phase sections in the ranges 0.15≤x≤0.25 and 0.73≤x≤0.77. Some parameters of the crystal structure, the values of the total and ionic components of conductivity, the transfer numbers in the range of 290–380 K, and the integral va­lues of the standard thermodynamic functions of the Ag17GaGeSe12 compound were established for the first time.
温度< 600k时Ag9GaSe6 - Ag8GeSe6体系的热稳定相及其理化性质
在电化学电池(ECCs)中,在T<600 K下合成Ag9GaSe6-Ag8GeSe6 (І)体系的热力学稳定相:(−)С | Ag | SЕ | R(Ag+) | PЕ | С(+),其中C为石墨,Ag为左(负)电极,SE为纯Ag+离子导电固体电解质(ag2ges3 -玻璃),PE为右(正)电极,R(Ag+)为PE与SE接触的区域。以化合物(Ag9GaSe6)1 -和(Ag8GeSe6) -的非平衡混合物为原料,分别为0.05,0.1,0.2,…,0.9。由于热力学原因,Ag+离子从左电极转移到R(Ag+)区,作为x组分平衡相的成核中心,即作为三元化合物亚稳态混合物重建的催化剂。在加热-冷却循环中EMF对T依赖性的再现性是R(Ag+)区域重建完成的结果。Ag9GaSe6和Ag8GeSe6化合物的具有PE的ECCs的EMF与T的实验依赖性,其特征是具有不同温度区间的几个离散线性区域和对温度的功能依赖性。首次建立了合金中ag组分在x=0、0.3、0.5、0.7、1.0的离散截面上的偏吉布斯能随温度变化的方程,并计算了标准偏函数的值。旁路吸引行到EMF值的点的细胞在T = const任意选择温度298 K, 341 K, 395 K, 445 K, 495 K范围在280 - 500 K的确定的均衡时距空间的相组成(I)为:基于复合Ag17GaGeSe12固溶体的0.25 x≤≤0.75,根据化合物固体的解决方案(Ag9GaSe6)为0≤1 -хх≤0.15和0.83≤(Ag8GeSe6)хх≤1,和两个两阶段部分范围0.15≤≤0.25和0.73≤x≤0.77。首次建立了Ag17GaGeSe12化合物的晶体结构参数、总电导率和离子电导率、290 ~ 380 K范围内的传递数以及标准热力学函数的积分值。
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