Fine Patterning on 3D Sample with Curvature and Depth Using Resist Sheet with Latent Image

Abstract

A new patterning technique for applying the photolithography to the 3D sample is described. A sheet is newly introduced. This sheet has water-soluble polymer of polyvinyl alcohol. On this the photoresist can be spin-coated and patterned using the standard resist spin-coater and the mask aligner. The photoresist with the latent image is pasted on 3D samples. By patterning the resist film before pasting, the limit of Fresnel diffraction can be solved enabling the patterning at the close distance with the photomask. The fine patterns are demonstrated both on convex and concave samples.