DISO: A Domain Ontology for Modeling Dislocations in Crystalline Materials

IF 0.4 Q4 COMPUTER SCIENCE, INFORMATION SYSTEMS
Ahmad Zainul Ihsan, S. Fathalla, S. Sandfeld
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引用次数: 2

Abstract

Crystalline materials, such as metals and semiconductors, nearly always contain a special defect type called dislocation. This defect decisively determines many important material properties, e.g., strength, fracture toughness, or ductility. Over the past years, significant effort has been put into understanding dislocation behavior across different length scales via experimental characterization techniques and simulations. This paper introduces the dislocation ontology (DISO), which defines the concepts and relationships related to linear defects in crystalline materials. We developed DISO using a top-down approach in which we start defining the most general concepts in the dislocation domain and subsequent specialization of them. DISO is published through a persistent URL following W3C best practices for publishing Linked Data. Two potential use cases for DISO are presented to illustrate its usefulness in the dislocation dynamics domain. The evaluation of the ontology is performed in two directions, evaluating the success of the ontology in modeling a real-world domain and the richness of the ontology.
晶体材料位错建模的领域本体
晶体材料,如金属和半导体,几乎总是包含一种特殊的缺陷类型,称为位错。这种缺陷决定性地决定了许多重要的材料性能,例如强度、断裂韧性或延展性。在过去的几年中,通过实验表征技术和模拟,已经投入了大量的努力来理解不同长度尺度上的位错行为。本文介绍了位错本体(DISO),它定义了晶体材料中线性缺陷的相关概念和关系。我们采用自上而下的方法开发了DISO,在这种方法中,我们开始定义位错域中最一般的概念,并随后对它们进行专业化。DISO遵循发布关联数据的W3C最佳实践,通过持久URL发布。提出了DISO的两个潜在用例来说明它在位错动力学领域的有用性。对本体的评价从两个方面进行,即评价本体在现实世界领域建模的成功程度和本体的丰富性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Applied Computing Review
Applied Computing Review COMPUTER SCIENCE, INFORMATION SYSTEMS-
自引率
40.00%
发文量
8
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