Photoelectrochemical characterization of n-CuInSe2 films prepared by quasi-rheotaxy

Abstract

This is a preliminary study on the behaviour in regenerative photoelectrochemical cells of large-grained polycrystalline n-CuInSe₂ films prepared by a new technique consisting in depositing the semiconducting material on thin metal layers kept at a temperature close to, but lower than, their melting point. After characterization of the surface morphology of the films by scanning electron microscopy and by systematic scanning laser spot analysis, their output power characteristics when in contact with different redox couples have been examined. The results are discussed and further developments of the research outlined.