To elucidate the conductive behaviour of transition metals (Mn, Fe, Co, Ni) doped C20 molecular device

Noorinder Kaur, Rupendeep Kaur
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引用次数: 1

Abstract

Fullerene molecular device configurations are center of allurement for varied number of electronic and transport characteristics by eccentricity of atoms epitomized in the same. In this paper, low bias conductive feature of smallest molecular device C20 has been observed using doping of transition metals. We examined the doping effect of manganese, iron, cobalt and nickel on C20 fullerene in a two probe device configuration. Using this configuration the C20 fullerene is oriented carefully between left and right gold electrodes. Transport properties were investigated and compared which highlighted the superiority of Mn doped device over pristine, Fe, Co and Ni doped C20 molecular devices.
阐明过渡金属(Mn, Fe, Co, Ni)掺杂C20分子器件的导电行为
富勒烯分子器件的结构是不同数量的电子和传输特性的中心,由原子的偏心集中在一起。本文采用过渡金属掺杂的方法,观察了最小分子器件C20的低偏置导电特性。研究了锰、铁、钴和镍在C20富勒烯上的掺杂效应。使用这种结构,C20富勒烯被小心地定向在左右金电极之间。研究和比较了Mn掺杂器件的输运性质,突出了Mn掺杂器件相对于原始、Fe、Co和Ni掺杂的C20分子器件的优越性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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